MJD3055 COMPLEMENTARY SILICON POWER TRANSISTORS
The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance.
技术特性
- STMicroelectronics PREFERRED SALESTYPES
- SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
- ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T
应用领域
- GENERAL PURPOSE SWITCHING AND
AMPLIFIER
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内部原理图
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MJD3055 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| MJD3055T4 |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
MJD3055T4 |
DATASHEET
| 描述 |
版本 |
大小 |
| MJD3055 :COMPLEMENTARY SILICON POWER TRANSISTORS |
3 |
189KB |
