PD20015-E RF Power LDMOS transistor
The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20015-E’s superior linearity performance makes it an ideal solution for mobile radio applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly
技术特性
- Excellent thermal stability
- Common source configuration
- POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V
- Plastic package
- ESD protection
- In compliance with the 2002/95/EC european directive
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引脚定义图
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PD20015-E 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| PD20015-E |
Active |
|
1000 |
PowerSO-10RF (formed lead) |
Tube |
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PD20015-E |
DATASHEET
| 描述 |
版本 |
大小 |
| PD20015-E :DS5530: RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs |
4 |
242KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1294: PowerSO-10RF: the first true RF power SMD package |
3 |
1021KB |
PRODUCT PRESENTATIONS
SW FUNCTIONS
FLYERS
| 描述 |
版本 |
大小 |
| FLLET1011 ： LET series: latest LDMOS series for applications from 1 MHz to 2 GHz |
1.0 |
618KB |
