PD57002-E RF Power LDMOS transistor
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly
技术特性
- Excellent thermal stability
- Common source configuration
- POUT = 2 W with 15dB gain @ 960 MHz / 28 V
- New RF plastic package
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引脚定义图
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PD57002-E 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| PD57002-E |
Active |
|
1000 |
PowerSO-10RF (formed lead) |
Tube |
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PD57002-E |
DATASHEET
| 描述 |
版本 |
大小 |
| PD57002-E :DS4737: RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs |
4 |
521KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1294: PowerSO-10RF: the first true RF power SMD package |
3 |
1021KB |
PRODUCT PRESENTATIONS
SW FUNCTIONS
FLYERS
| 描述 |
版本 |
大小 |
| FLLET1011 ： LET series: latest LDMOS series for applications from 1 MHz to 2 GHz |
1.0 |
618KB |
