SD56120M RF Power LDMOS transistor
The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity
技术特性
- Excellent thermal stability
- Common source configuration Push-pull
- POUT = 120W with 13dB gain @ 860MHz / 32V
- BeO free package
- Internal input matching
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引脚输出
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SD56120M 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| SD56120M |
Active |
|
1000 |
M252 |
Loose Piece |
|
SD56120M |
DATASHEET
| 描述 |
版本 |
大小 |
| SD56120M :DS1990: RF power transistors, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs |
10 |
295KB |
