ST13007D High voltage fast-switching NPN power transistor

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

It uses a Cellular Emitter structure to enhance switching speeds

技术特性
  • IMPROVED SPECIFICATION:
    • LOWER LEAKAGE CURRENT
    • TIGHTER GAIN RANGE
    • DC CURRENT GAIN PRESELECTION
    • TIGHTER STORAGE TIME RANGE
  • HIGH VOLTAGE CAPABILITY
  • INTEGRATED FREE-WHEELING DIODE
  • LOW SPREAD OF DYNAMIC PARAMETERS
  • MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
  • VERY HIGH SWITCHING SPEED
  • FULLY CHARACTERIZED AT 125 °C
  • LARGE RBSOA
应用领域
  • UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS
  • SWITCH MODE POWER SUPPLIES
内部原理图
ST13007D 功能框图
ST13007D 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
ST13007D Active   1000 TO-220AB Tube   ST13007D
DATASHEET
描述 版本 大小
ST13007D :DS2303: High voltage fast-switching NPN power transistor 3 213KB