STB11N52K3 N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in D²PAK package
These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.
技术特性
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
应用领域
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内部原理图
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STB11N52K3 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB11N52K3 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STB11N52K3 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB11N52K3 :DS7239: N-channel 525 V, 0.41 Ω, 10 A SuperMESH3™ Power MOSFET in D²PAK,TO-220FP and TO-220 packages |
2 |
1156KB |
