STB11NM60 N-channel 600 V, 0.4 Ohm, 11 A, I²PAK, D²PAK MDmesh(TM) Power MOSFET
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
技术特性
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STB11NM60 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB11NM60T4 |
NRND |
|
1000 |
D²PAK |
Tape And Reel |
|
STB11NM60T4 |
| STB11NM60-1 |
NRND |
|
1000 |
I²PAK |
Tube |
|
STB11NM60-1 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB11NM60 :DS3653: N-channel 650V @ TJmax - 0.4 ohm - 11A TO-220/TO-220FP/D²PAK/I²PAK - MDmesh Power MOSFET |
6 |
361KB |
