STB120N4LF6 N-channel 40 V, 3.1 mOhm, 80 A, D²PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages
技术特性
- Standard threshold drive
- 100% avalanche tested
应用领域
- Switching application
- Automotive
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内部原理图
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STB120N4LF6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB120N4LF6 |
Active |
1.8 |
1000 |
D²PAK |
Tape And Reel |
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STB120N4LF6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB120N4LF6 :DS6649: N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET |
2 |
892KB |
PRODUCT PRESENTATIONS
