STB12NM50N N-channel 500V - 0.29Ohm - 11A - TO-220 /FP- D²PAK - DPAK
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STB12NM50N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB12NM50N |
NRND |
|
1000 |
D²PAK |
Tape And Reel |
|
STB12NM50N |
DATASHEET
| 描述 |
版本 |
大小 |
| STB12NM50N :DS4315: N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D²PAK - I²PAK - TO-220FP |
8 |
582KB |
