STB12NM50ND N-channel 500 V, 0.29 Ohm, 11 A, FDmesh II Power MOSFET (with fast diode) in D²PAK
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters
技术特性
- The worldwide best RDS(on)* area amongst the fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
应用领域
|
内部原理图
 |
STB12NM50ND 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB12NM50ND |
Active |
2.327 |
1000 |
D²PAK |
Tape And Reel |
|
STB12NM50ND |
DATASHEET
| 描述 |
版本 |
大小 |
| STB12NM50ND :DS5911: N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode) in D²PAK, DPAK, TO-220FP |
2 |
1024KB |
