STB150N3LH6 N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D²PAK package
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages
技术特性
- 100% avalanche tested
- Logic level drive
应用领域
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内部原理图
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STB150N3LH6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB150N3LH6 |
Active |
1.8 |
1000 |
D²PAK |
Tape And Reel |
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STB150N3LH6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB150N3LH6 :DS9117: N-channel 30 V, 2.4 mΩ typ., 80 A, STripFET™ VI DeepGATE™ Power MOSFET in D²PAK package |
1 |
990KB |
PRODUCT PRESENTATIONS
