STB18N65M5 N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in D²PAK package

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency

技术特性
  • Worldwide best RDS(on) * area
  • Higher VDSSrating and high dv/dt capability
  • Excellent switching performance
  • 100% avalanche tested
应用领域
  • Switching applications
内部原理图
STB18N65M5 功能框图
STB18N65M5 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
STB18N65M5 Active   1000 D²PAK Tape And Reel   STB18N65M5
DATASHEET
描述 版本 大小
STB18N65M5 :DS9171: N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages 1 1016KB
MARKETING BROCHURES
描述 版本 大小
MDmesh V power MOSFETs 1.0 1242KB