STB20NM60D N-channel 600V - 0.26Y - 20A - D²PAK
The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters
技术特性
- High dv/dt and avalanche capabilities
- 100% Avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Tight process control and high manufacturing yields
应用领域
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内部原理图
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STB20NM60D 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB20NM60D |
NRND |
|
1000 |
D²PAK |
Tape And Reel |
|
STB20NM60D |
DATASHEET
| 描述 |
版本 |
大小 |
| STB20NM60D :DS4786: N-channel 600V - 0.26Ω - 20A - D²PAK FDmesh™ Power MOSFET |
1 |
280KB |
