STB21N65M5 N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in D²PAK
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance,
which is unmatched among siliconbased
Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
技术特性
- Worldwide best RDS(on) * area
- Higher VDSS rating
- High dv/dt capability
- Excellent switching performance
- 100% avalanche tested
应用领域
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内部原理图
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STB21N65M5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB21N65M5 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STB21N65M5 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB21N65M5 :DS6116: N-channel 650 V, 0150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247 |
4 |
1434KB |
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