STB30NF20L N-channel 200 V, 0.065 Ohm, 30 A, D²PAK STripFET(TM) Power MOSFET
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge.
技术特性
- Gate charge minimized
- 100% avalanche tested
- Excellent figure of merit (RDS*Qg)
- Very good manufacturing repeatability
- Very low intrinsic capacitance
应用领域
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内部原理图
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STB30NF20L 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB30NF20L |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STB30NF20L |
| STB30NF20LT4 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STB30NF20LT4 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB30NF20L :DS8868: N-channel 200 V, 0.065 Ω, 30 A STripFET™ Power MOSFET in D²PAK package |
2 |
848KB |
