STB5N52K3 N-channel 525 V, 1.2 Ohm, 4.4 A SuperMESH3(TM) Power MOSFET D²PAK
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.
技术特性
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
应用领域
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内部原理图
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STB5N52K3 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STB5N52K3 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STB5N52K3 |
DATASHEET
| 描述 |
版本 |
大小 |
| STB5N52K3 :N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK |
2 |
1176KB |
