STC04IE170HV Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 ®
The STC04IE170HV is manufactured in Monolithic ESBT Technology, aimed to provide best performance in High Frequency / High Voltage Applications. It is designed for use in Gate Driven based topologies.
技术特性
- High voltage / high current Cascode configuration
- Low equivalent on resistance
- Very fast-switch, up to 150 kHZ
- Squared RBSOA, up to 1700 V
- Very low CISS driven by RG = 47 Ω
- Very low turn-off cross over time
应用领域
- Aux SMPS for three phase mains
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内部原理图
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STC04IE170HV 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STC04IE170HV |
NRND |
|
1000 |
TO247-4L HP |
Tube |
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STC04IE170HV |
DATASHEET
| 描述 |
版本 |
大小 |
| STC04IE170HV :DS4905: Monolithic emitter switched bipolar transistor ESBT® 1700 V - 4 A - 0.17 Ω |
3 |
239KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN2528: Very wide input voltage range 6 W SMPS for metering |
1 |
858KB |
| AN2454: Universal input voltage power supply for ESBT based breaker and metering applications |
1 |
3069KB |
