STD10NM60ND N-channel 600 V, 0.57 Ohm, 8 A, DPAK FDmesh(TM) II Power MOSFET
This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt avalanche capabilities
应用领域
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内部原理图
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STD10NM60ND 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD10NM60ND |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
STD10NM60ND |
DATASHEET
| 描述 |
版本 |
大小 |
| STD10NM60ND :DS7103: N-channel 600 V, 0.57 Ω, 8 A, DPAK, TO-220FP, TO-220 FDmesh™ II Power MOSFET (with fast diode) |
2 |
1223KB |
