STD11NM60N N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in a DPAK package
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistancel
应用领域
|
内部原理图
 |
STD11NM60N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD11NM60N |
NRND |
|
1000 |
DPAK |
Tape And Reel |
|
STD11NM60N |
DATASHEET
| 描述 |
版本 |
大小 |
| STD11NM60N :DS4869: N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I²PAK, IPAK, DPAK, D²PAK |
5 |
633KB |
