STD150N3LLH6 N-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFET
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages
技术特性
- RDS(on) * Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses Application
应用领域
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内部原理图
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STD150N3LLH6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD150N3LLH6 |
Active |
|
1000 |
DPAK |
Tube |
|
STD150N3LLH6 |
| STD150N3LLH6T4 |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
STD150N3LLH6T4 |
DATASHEET
| 描述 |
版本 |
大小 |
| STD150N3LLH6 :DS5992: N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET |
3 |
944KB |
