STD40N2LH5 N-channel 25 V, 0.01 Ohm, 40 A, DPAK, IPAK
This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved
技术特性
- RDS(on) * Qg industry benchmark
- Extremely low on-resistance RDS(on)
- Very low switching gate charge
- High avalanche ruggedness
- Low gate drive power losses
应用领域
|
内部原理图
 |
STD40N2LH5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD40N2LH5 |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
STD40N2LH5 |
| STD40N2LH5T4 |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
STD40N2LH5T4 |
DATASHEET
| 描述 |
版本 |
大小 |
| STD40N2LH5 :DS5905: N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK STripFET™ V Power MOSFET |
3 |
916KB |
CONFERENCE PAPERS
