STD4NK100Z N-channel 1000 V, 5.6 Ohm, 2.2 A SuperMESH(TN) Power MOSFET Zener-protected in DPAK package
This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics’ SuperMESH™ technology, achieved through optimization of ST’s well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications
技术特性
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitance
- Very good manufacturing repeatability
应用领域
- Switching application
– Automotive
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内部原理图
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STD4NK100Z 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD4NK100Z |
Preview |
|
1000 |
DPAK |
Tape And Reel |
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STD4NK100Z |
DATASHEET
| 描述 |
版本 |
大小 |
| STD4NK100Z :DS8902: N-channel 1000 V, 5.6 Ω, 2.2 A SuperMESH™ Power MOSFET Zener-protected in DPAK package |
1 |
612KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1703: Guidelines for using ST's MOSFET smd Packages |
1 |
760KB |
