STD85N3LH5 N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAK
This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTMtechnology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved
技术特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
应用领域
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内部原理图
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STD85N3LH5 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD85N3LH5 |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
STD85N3LH5 |
| STD85N3LH5T4 |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
STD85N3LH5T4 |
DATASHEET
| 描述 |
版本 |
大小 |
| STD85N3LH5 :N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET™ V Power MOSFET |
7 |
812KB |
CONFERENCE PAPERS
