STD9NM60N N-channel 600 V, 0.63 Ohm, 6.5 A DPAK MDmesh(TM) II Power MOSFET
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
|
内部原理图
 |
STD9NM60N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STD9NM60N |
Active |
|
1000 |
DPAK |
Tape And Reel |
|
STD9NM60N |
DATASHEET
| 描述 |
版本 |
大小 |
| STD9NM60N :DS6986: N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET |
1 |
897KB |
