STF14NM65N N-channel 650 V, 0.33 Ohm, 12 A MDmesh(TM) II Power MOSFET TO-220FP
This series of devices is designed using the second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STF14NM65N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STF14NM65N |
NRND |
|
1000 |
TO-220FP |
Tube |
|
STF14NM65N |
DATASHEET
| 描述 |
版本 |
大小 |
| STF14NM65N :DS5721: N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET TO-220, TO-220FP, D²PAK, I²PAK, TO-247 |
2 |
547KB |
