STF15NM65N N-channel 650 V, 0.35 Ohm, 12 A, TO-220FP second generation MDmesh(TM) Power MOSFET
These devices are N-channel Power MOSFETs realized using the second generation MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100 % avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
|
内部原理图
 |
STF15NM65N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STF15NM65N |
Active |
|
1000 |
TO-220FP |
Tube |
|
STF15NM65N |
DATASHEET
| 描述 |
版本 |
大小 |
| STF15NM65N :DS5441: N-channel 650 V, 0.35 Ω, 12 A TO-220, TO-220FP second generation MDmesh™ Power MOSFET |
2 |
938KB |
