STF19NM65N N-channel 650 V, 0.25 Ohm, 15.5 A, MDmesh(TM) 2 Power MOSFET in a TO-220FP package
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters
技术特性
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
应用领域
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内部原理图
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STF19NM65N 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STF19NM65N |
NRND |
|
1000 |
TO-220FP |
Tube |
|
STF19NM65N |
DATASHEET
| 描述 |
版本 |
大小 |
| STF19NM65N :N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I²PAK-TO-247 second generation MDmesh™ Power MOSFET |
1 |
544KB |
