STFI260N6F6 N-channel 60 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I²PAKFP package
This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages
技术特性
- Fully insulated and low profile package with increased creepage path from pin to heatsink plate
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
应用领域
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内部原理图
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STFI260N6F6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STFI260N6F6 |
Preview |
|
1000 |
I²PAKFP |
Tube |
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STFI260N6F6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STFI260N6F6 :DS9006: N-channel 60 V, 0.0024 Ω, 80 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAKFP package |
1 |
635KB |
TECHNICAL NOTES
| 描述 |
版本 |
大小 |
| TN0885: New I²PAKFP (TO-281) package, practical approach for compact and slim product design needs |
1 |
418KB |
