STGB19NC60K 19 A, 600 V, very fast IGBT with Ultrafast diode
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior
技术特性
- Low on-voltage drop (VCE(sat))
- Low Cres / Cies ratio (no cross conduction susceptibility)
- Short circuit withstand time 10 μs
- IGBT co-packaged with ultra fast free-wheeling diode
应用领域
- High frequency inverters
- Motor drivers
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管脚定义图
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STGB19NC60K 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGB19NC60KT4 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STGB19NC60KT4 |
| STGB19NC60K |
Active |
|
1000 |
D²PAK |
Tube |
|
STGB19NC60K |
DATASHEET
| 描述 |
版本 |
大小 |
| STGB19NC60K :20 A - 600 V - short circuit rugged IGBT |
2 |
544KB |
