STGB20H60DF 600 V, 20 A high speed trench gate field-stop IGBT
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation
技术特性
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- 6 μs short-circuit withstand time
- Ultrafast soft recovery antiparallel diode
应用领域
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应用原理图
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STGB20H60DF 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGB20H60DF |
Preview |
|
1000 |
D²PAK |
Tape And Reel |
|
STGB20H60DF |
DATASHEET
| 描述 |
版本 |
大小 |
| STGB20H60DF :DS9293: 600 V, 20 A high speed trench gate field-stop IGBT |
1 |
610KB |
