STGB20NB41LZ 20 A, 410 V internally clamped IGBT
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection
技术特性
- POLYSILICON GATE VOLTAGE DRIVEN
- LOW THRESHOLD VOLTAGE
- LOW ON-VOLTAGE DROP
- LOW GATE CHARGE
- HIGH CURRENT CAPABILITY
- HIGH VOLTAGE CLAMPING FEATURE
|
管脚定义图
 |
STGB20NB41LZ 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGB20NB41LZT4 |
Active |
|
1000 |
D²PAK |
Tape And Reel |
|
STGB20NB41LZT4 |
| STGB20NB41LZ |
Active |
|
1000 |
D²PAK |
Tube |
|
STGB20NB41LZ |
DATASHEET
| 描述 |
版本 |
大小 |
| STGB20NB41LZ :N-channel clamped 20A - D²PAK internally clamped PowerMESH™ IGBT |
5 |
258KB |
