STGD10HF60KD 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode
This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies
技术特性
- Low on-voltage drop (VCE(sat))
- Low Cres/ Ciesratio (no cross conduction susceptibility)
- Switching losses include diode recovery energy
- Short-circuit rated
- Very soft Ultrafast recovery anti-parallel diode
应用领域
- High frequency inverters
- SMPS and PFC in both hard switch and
resonant topologies
- Motor drives
- Injection systems
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应用原理图
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STGD10HF60KD 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGD10HF60KDT4 |
Preview |
|
1000 |
DPAK |
Tape And Reel |
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STGD10HF60KDT4 |
| STGD10HF60KD |
Preview |
|
1000 |
DPAK |
Tube |
|
STGD10HF60KD |
DATASHEET
| 描述 |
版本 |
大小 |
| STGD10HF60KD :DS8924: 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode |
1 |
640KB |
