STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT
This application specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system
技术特性
- Low threshold voltage
- Low on-voltage drop
- High voltage clamping feature
- Gate and gate-emitter integrated resistors
应用领域
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应用原理图
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STGP35N35LZ 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGP35N35LZ |
Active |
|
1000 |
TO-220AB |
Tube |
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STGP35N35LZ |
DATASHEET
| 描述 |
版本 |
大小 |
| STGP35N35LZ :EAS 450 mJ, 345 V, internally clamped IGBT |
5 |
742KB |
