STGW25H120DF 25 A, 1200 V field stop trench gate IGBT with Ultrafast diode
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "H" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation
技术特性
- Very high speed switching
- Tight parameters distribution
- Tail-less switching off
- Ultrafast free-wheeling diode co-packaged
- Low thermal resistance
应用领域
- Uninterruptible power supply
- Welding machines
- Photovoltaic inverters
- Power factor correction
- High switching frequency converters
|
内部原理图
 |
STGW25H120DF 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGW25H120DFT4 |
Evaluation |
|
1000 |
TO-247 |
Tape And Reel |
|
STGW25H120DFT4 |
| STGW25H120DF |
Evaluation |
|
1000 |
TO-247 |
Tube |
|
STGW25H120DF |
DATASHEET
| 描述 |
版本 |
大小 |
| STGW25H120DF :DS6823: High speed 25 A, 1200 V, trench gate field stop IGBT |
3 |
249KB |
