STGW40H120DF2 1200 V, 40 A very high speed trench gate field-stop IGBT
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "H" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation
技术特性
- Maximum junction temperature : TJ= 175 °C
- High speed switching
- Minimized tail current
- Low saturation voltage: VCE(sat)= 2.1 V (typ.) @ IC= 40 A
- Safe paralleling
- 10 μs short-circuit withstand time at TJ= 150 °C
- Ultrafast free-wheeling diode co-packaged
- Low thermal resistance
- Lead free package
应用领域
- Uninterruptible power supply
- Welding machines
- Photovoltaic inverters
- Power factor correction
- High switching frequency converters
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应用原理图
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STGW40H120DF2 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGW40H120DF2 |
Preview |
|
1000 |
TO-247 |
Tube |
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STGW40H120DF2 |
DATASHEET
| 描述 |
版本 |
大小 |
| STGW40H120DF2 :DS9298: 1200 V, 40 A high speed trench gate field-stop IGBT |
1 |
248KB |
