STGW40V65DF 650 V, 40 A very high speed trench gate field-stop IGBT
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation
技术特性
- Maximum junction temperature : TJ= 175 °C
- Very high speed switching
- Negligible tail current
- Low saturation voltage: VCE(sat)= 1.9 V (typ.) @ IC= 40 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Lead free package
应用领域
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- Very high frequency converters
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内部原理图
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STGW40V65DF 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGW40V65DF |
Preview |
|
1000 |
TO-247 |
Tube |
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STGW40V65DF |
DATASHEET
| 描述 |
版本 |
大小 |
| STGW40V65DF :DS9265: 650 V, 40 A very high speed trench gate field-stop IGBT |
1 |
347KB |
