STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode
Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and a very tight parameter distribution result in an easier paralleling operation
技术特性
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- 6 μs short-circuit withstand time
- Ultrafast soft recovery antiparallel diode
- Lead free package
应用领域
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- High switching frequency converters
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内部原理图
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STGW50H60DF 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGW50H60DF |
Active |
|
1000 |
TO-247 |
Tube |
|
STGW50H60DF |
DATASHEET
| 描述 |
版本 |
大小 |
| STGW50H60DF :DS7167: 50 A, 600 V field stop trench gate IGBT with Ultrafast diode |
5 |
1757KB |
