STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation
技术特性
- Very high speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- 6 μs short-circuit withstand time
- Ultrafast soft recovery antiparallel diode
应用领域
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- High switching frequency converters
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内部原理图
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STGW60H65DRF 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGW60H65DRF |
Active |
|
1000 |
TO-247 |
Tube |
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STGW60H65DRF |
DATASHEET
| 描述 |
版本 |
大小 |
| STGW60H65DRF :DS8702: 60 A, 650 V field stop trench gate IGBT with Ultrafast diode |
4 |
1913KB |
