STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode
This device is an ultrafast IGBT. It utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
技术特性
- Low on-losses
- High current capability
- Low gate charge
- Short circuit withstand time 10 μs
- IGBT co-packaged with Ultrafast free-wheeling diode
应用领域
|
内部原理图
 |
STGWA30N120KD 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STGWA30N120KDT4 |
Active |
|
1000 |
TO-247 long leads |
Tape And Reel |
|
STGWA30N120KDT4 |
| STGWA30N120KD |
Active |
|
1000 |
TO-247 long leads |
Tube |
|
STGWA30N120KD |
DATASHEET
| 描述 |
版本 |
大小 |
| STGWA30N120KD :DS5696: 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode |
5 |
420KB |
