STH130N10F3-2 N-channel 100 V, 7.8 mOhm, 120 A STripFET(TM) Power MOSFET in H2PAK-2 package
These N-channel enhancement mode Power MOSFETs benefit from the latest refinement of STMicroelectronics' unique “single feature size“ strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge
技术特性
- Ultra low on-resistance
- 100% avalanche tested
应用领域
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内部原理图
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STH130N10F3-2 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STH130N10F3-2 |
Active |
|
1000 |
H2PAK-2 |
Tube |
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STH130N10F3-2 |
DATASHEET
| 描述 |
版本 |
大小 |
| STH130N10F3-2 :DS7114: N-channel 100 V, 7.8 mΩ, 120 A STripFET™ Power MOSFET in TO-220FP, H²PAK-2 and TO-220 packages |
2 |
1180KB |
