STH240N75F3-6 N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package
These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance
技术特性
- Conduction losses reduced
- Low profile, very low parasitic inductance
应用领域
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内部原理图
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STH240N75F3-6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STH240N75F3-6 |
Active |
|
1000 |
H2PAK-6 |
Tape And Reel |
|
STH240N75F3-6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STH240N75F3-6 :DS7112: N-channel 75 V, 2.6 mΩ typ., 180 A STripFET™ III Power MOSFET in H²PAK-2 and H²PAK-6 packages |
2 |
873KB |
