STH300NH02L-6 N-channel 24 V, 0.95 mOhm, 180 A, H2PAK-6 STripFET(TM) Power MOSFET
This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics' unique "single feature size" strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge
技术特性
- Conduction losses reduced
- Low profile, very low parasitic inductance, high current package
应用领域
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内部原理图
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STH300NH02L-6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STH300NH02L-6 |
Active |
|
1000 |
H2PAK-6 |
Tape And Reel |
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STH300NH02L-6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STH300NH02L-6 :DS7302: N-channel 24 V, 0.95 mΩ, 180 A, H²PAK-6 STripFET™ Power MOSFET |
2 |
815KB |
