STH310N10F7-6 N-channel 100 V, 2.1 mOhm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-6 package
These devices utilize the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages
技术特性
- Ultra low on-resistance
- 100% avalanche tested
应用领域
- High current switching applications
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内部原理图
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STH310N10F7-6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STH310N10F7-6 |
Preview |
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1000 |
H2PAK-6 |
Tape And Reel |
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STH310N10F7-6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STH310N10F7-6 :DS8678: N-channel 100 V, 2.1 mΩ typ., 180 A STripFET™ VII DeepGATE™ Power MOSFET in H²PAK-2, H²PAK-6 and TO-220 packages |
5 |
1211KB |
