STH400N4F6-6 N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-6 package
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages
技术特性
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
应用领域
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内部原理图
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STH400N4F6-6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STH400N4F6-6 |
Preview |
|
1000 |
H2PAK-6 |
Tape And Reel |
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STH400N4F6-6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STH400N4F6-6 :DS9161: N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 and H²PAK-6 packages |
1 |
427KB |
