STI13005-H High voltage fast-switching NPN power transistor
This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA
技术特性
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
应用领域
- Electronic ballast for fluorescent lighting
- Switch mode power supplies
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内部原理图
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STI13005-H 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STI13005-H |
Active |
|
1000 |
I²PAK |
Tube |
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STI13005-H |
DATASHEET
| 描述 |
版本 |
大小 |
| STI13005-H :DS8952: High voltage fast-switching NPN power transistor |
1 |
226KB |
