STI300N4F6 N-channel 40 V, 1.4 mOhm, 160 A, I²PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance
技术特性
- Standard level VGS(th)
- 175 °C junction temperature
- 100% avalanche rated
应用领域
- Switching applications
- Automotive
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内部原理图
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STI300N4F6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STI300N4F6 |
Preview |
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1000 |
I²PAK |
Tube |
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STI300N4F6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STI300N4F6 :N-channel 40 V, 1.4 mΩ, 160 A, I²PAK STripFET™ VI DeepGATE™ Power MOSFET |
1 |
459KB |
