STI5N52U N-channel 525 V, 1.28 Ohm, 4.4 A, I²PAK UltraFASTmesh(TM) Power MOSFET
These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced on-resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.
技术特性
- 100% avalanche tested
- Outstanding dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitances
- Very low RDS(on)
- Extremely low trr
应用领域
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内部原理图
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STI5N52U 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STI5N52U |
NRND |
|
1000 |
I²PAK |
Tube |
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STI5N52U |
DATASHEET
| 描述 |
版本 |
大小 |
| STI5N52U :DS6261: N-channel 525 V, 1.28 Ω, 4.4 A, DPAK, TO-220FP, I²PAK UltraFASTmesh™ Power MOSFET |
2 |
938KB |
