STL100N6LF6 N-channel 60 V, 0.0038 Ohm typ., 22 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in PowerFLAT(TM) 5x6 package
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages
技术特性
- Low gate charge
- Very low on-resistance
- High avalance ruggedeness
应用领域
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内部原理图
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STL100N6LF6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL100N6LF6 |
Active |
|
1000 |
PowerFLAT 5x6 |
Tape And Reel |
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STL100N6LF6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STL100N6LF6 :DS7113: N-channel 60 V, 0.0038 Ω, 22 A, PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET |
2 |
512KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1703: Guidelines for using ST's MOSFET smd Packages |
1 |
760KB |
