STL10DN15F3 N-channel 150 V, 0.20 Ohm typ., 2.8 A STripFET(TM) III Power MOSFET in a PowerFLAT(TM) 5x6 double island package
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance
技术特性
- Improved die-to-footprint ratio
- Very low profile package (1 mm max)
- Very low thermal resistance
- Low on-resistance
应用领域
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内部原理图
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STL10DN15F3 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL10DN15F3 |
Active |
|
1000 |
PowerFLAT 5x6 D.I |
Tape And Reel |
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STL10DN15F3 |
DATASHEET
| 描述 |
版本 |
大小 |
| STL10DN15F3 :DS9311: N-channel 150 V, 0.20 Ω typ., 2.8 A STripFET™ III Power MOSFET in a PowerFLAT™ 5x6 double island package |
1 |
1895KB |
APPLICATION NOTES
| 描述 |
版本 |
大小 |
| AN1703: Guidelines for using ST's MOSFET smd Packages |
1 |
760KB |
