STL17N3LLH6 N-channel 30 V, 0.0038 Ohm, 17 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in PowerFLAT(TM) 3.3x3.3 package
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved
技术特性
- RDS(on)* Qgindustry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
- Very low switching gate charge
应用领域
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测试电路图
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STL17N3LLH6 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STL17N3LLH6 |
NRND |
|
1000 |
PowerFLAT 3.3x3.3 |
Tape And Reel |
|
STL17N3LLH6 |
DATASHEET
| 描述 |
版本 |
大小 |
| STL17N3LLH6 :DS6180: N-channel 30 V, 0.0038 Ω, 17 A PowerFLAT™(3.3x3.3) STripFET™ VI DeepGATE™ Power MOSFET |
3 |
921KB |
